Lateral bipolar transistor and FET

Details Lateral bipolar transistor and FET Lateral bipolar transistor and FET

1995-07-10

1996-11-12

Fahmy, Wael M.

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Lateral bipolar transistor structure

257571, 257588, H01L 2900, H01L 27082, H01L 27102

Patent

active

055743064

ABSTRACT:
A lateral bipolar transistor and method of making the transistor are disclosed. The device is made by etching a trench around a central region of a semiconductor body. An emitter is buried beneath the surface of this central area and contact to it is made via a self-alignment technique. The collector region of the transistor is contacted through the floor of the trench while the base region of the transistor is contacted in a region that surrounds the trench. The described method is compatible with the simultaneous manufacture of FET devices on the same chip.

REFERENCES:
patent: 4743565 (1988-05-01), Goth et al.
patent: 4749661 (1988-06-01), Bower
patent: 5049964 (1991-09-01), Sakai et al.
patent: 5187109 (1993-02-01), Cook et al.

Affiliated with

Also associated with

Rating

Lateral bipolar transistor and FET does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Lateral bipolar transistor and FET, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Lateral bipolar transistor and FET will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-564910