Lateral bipolar transistor

Details Lateral bipolar transistor Lateral bipolar transistor

1993-12-09

1995-06-06

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

257 19, 257378, 257557, H01L 2972

Patent

active

054225027

ABSTRACT:
A lateral bipolar transistor is provided in which the active base region comprises a layer of a material providing a predetermined valence band offset relative to the emitter and collector regions, to enhance transport of carriers from the emitter to the collector in a lateral manner. In particular, a silicon hetero-junction lateral bipolar transistor (HLBT) is provided. The lateral bipolar transistor structure and method of fabrication of the transistor is compatible with a bipolar-CMOS integrated circuit. Preferably the base region comprises a silicon-germanium alloy or a silicon-germanium superlattice structure comprising a series of alternating layers of silicon and silicon-germanium alloy.

REFERENCES:
patent: 4771013 (1988-09-01), Curran
patent: 4771326 (1988-09-01), Curran
patent: 5006912 (1991-04-01), Smith et al.
patent: 5081517 (1992-01-01), Contiero et al.
patent: 5089428 (1992-02-01), Verret et al.
patent: 5159424 (1992-10-01), Morishita
patent: 5164797 (1992-11-01), Thornton
patent: 5198376 (1993-03-01), Divakaruni et al.
R. People, "Physics and Applications of GexSi1-x/Si Strained-layer Heterostructures" IEEE Journal of Quantum Electronics, vol. 22, pp. 1696-1710 Sep. 86.

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