Lateral bipolar transistor

Details Lateral bipolar transistor Lateral bipolar transistor

1991-12-02

1995-03-14

Limanek, Robert P.

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

257554, 257588, 257592, H01L 2972, H01L 2712, H01L 2906, H01L 2904

Patent

active

053979125

ABSTRACT:
A lateral bipolar transistor structure (10) formed in a laterally isolated semiconductor device tub (22) of a first conductivity type is provided. First and second trenches are etched in the device tub and filled with doped polysilicon of a second conductivity type to form an emitter (30) and a collector (32). The portion of the tub (22) between the emitter (30) and collector (32) regions forms a base region. This configuration provides high emitter area and minimal device surface area, as well as emitter (30) and collector (32) regions which are interchangeable, greatly easing layout of integrated circuits using the transistor structure (10).

REFERENCES:
patent: 4259680 (1981-03-01), Lepselter et al.
patent: 4733287 (1988-03-01), Bower
patent: 4753709 (1988-06-01), Welch et al.
patent: 4965872 (1990-10-01), Vasudev
patent: 4994406 (1991-02-01), Vasquez et al.
patent: 5026663 (1991-06-01), Zdebel et al.
patent: 5027184 (1991-06-01), Soclof
patent: 5031014 (1991-07-01), Soclof
patent: 5047828 (1991-09-01), Soclof
patent: 5065208 (1991-11-01), Shah et al.

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