Lateral bipolar transistor

Details Lateral bipolar transistor Lateral bipolar transistor

2009-02-24

2010-02-23

Cao, Phat X (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

C257S575000, C257SE29173

Reexamination Certificate

active

07667294

ABSTRACT:
A P+ base drawing diffusion region is formed on a substrate having an SOI structure. N+ emitter diffusion regions are formed on both sides of the P+ base drawing diffusion region through isolation insulating films interposed therebetween. A P type SOI layer, which serves as a base diffusion region, is formed so as to surround the N+ emitter diffusion regions, and conductive layers are formed thereon. Further, an N+ collector diffusion region is formed so as to surround the conductive layers.

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