Lateral bipolar transistor

Details Lateral bipolar transistor Lateral bipolar transistor

1993-08-12

1994-10-25

Thomas, Tom

Fishing, trapping, and vermin destroying

437 31, 437162, 437152, 437154, 148DIG124, 148DIG96, H01L 21265

Patent

active

053588835

ABSTRACT:
A lateral bipolar transistor (10) includes a retrograde doping profile (21) that is formed within a substrate (11) to form the transistor's (10) collector region (14). A base region (16) that includes an inactive base area and an active base area (17) is formed in the collector region (14). An emitter (18) is formed within the active base area (17) wherein current (22) flows through the emitter (18) through the active base area (17) and through the collector region (14). The base region, the emitter, and a collector contact region are all formed by driving dopants from an overlying polysilicon layer.

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Tamba et al., "A Novel CMOS-Compatible Lateral Bipolar Transistor for High-Speed BiCMOS LSI", IEDM 1990, pp. 395-398.
Lu et al., "Simulations of Collector Resistance of PNP Transistors for Complemetary Bipolar Technology", Solid State Electronics, vol. 32, #8, pp. 675-678, 1988.

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