Lateral bipolar mode field effect transistor

Details Lateral bipolar mode field effect transistor Lateral bipolar mode field effect transistor

1998-06-26

2000-07-04

Picard, Leo P.

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

257138, 257139, 257140, 257135, 438186, H01L 310312, H01L 2712

Patent

active

060842547

ABSTRACT:
A lateral bipolar field effect transistor having a drift region of a first conductivity formed on a silicon-on insulation substrate with a buried insulation layer, a gate region of a second conductivity formed over and from the buried insulation layer separated by a channel depth, in the drift region, a source region of the first conductivity contacting with the gate region and formed on the buried insulation layer, and a drain region of the first conductivity opposite to the source region, the drain region separated from the gate region by a selected distance. The gate region comprises a plurality of cells arranged parallel to an extension of the source region, each cell separated from adjacent cell by a channel width.

REFERENCES:
patent: 3855608 (1974-12-01), George et al.
patent: 3938241 (1976-02-01), George et al.
patent: 5241211 (1993-08-01), Tashiro
patent: 5488241 (1996-01-01), Journeau
patent: 5494837 (1996-02-01), Subramanian et al.
patent: 5510632 (1996-04-01), Brown et al.

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