Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Reexamination Certificate
2011-03-01
2011-03-01
Bryant, Kiesha R (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
C257S378000, C257SE29187, C257SE29197, C257S558000
Reexamination Certificate
active
07897995
ABSTRACT:
A lateral bipolar junction transistor formed in a semiconductor substrate includes an emitter region; a base region surrounding the emitter region; a gate disposed at least over a portion of the base region; a collector region having at least one open side and being disposed about a periphery of the base region; a shallow trench isolation (STI) region disposed about a periphery of the collector region; a base contact region disposed about a periphery of the STI region; and an extension region merging with the base contact region and laterally extending to the gate on the open side of the collector region.
REFERENCES:
patent: 5139961 (1992-08-01), Solheim et al.
patent: 5717241 (1998-02-01), Malhi et al.
patent: 2010/0252860 (2010-10-01), Yang
Cheng Tao
Ko Ching-Chung
Lee Tung-Hsing
Yang Ming-Tzong
Bryant Kiesha R
Hsu Winston
Margo Scott
Mediatek Inc.
Wright Tucker
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