Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure
Reexamination Certificate
2011-04-26
2011-04-26
Prenty, Mark (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
C257SE29187, C438S204000
Reexamination Certificate
active
07932581
ABSTRACT:
A lateral bipolar junction transistor includes an emitter region; a base region surrounding the emitter region; a gate disposed at least over a portion of the base region; a collector region surrounding the base region with an offset between an edge of the gate and the collector region; a lightly doped drain region between the edge of the gate and the collector region; a salicide block layer disposed on or over the lightly doped drain region; and a collector salicide formed on at least a portion of the collector region.
REFERENCES:
patent: 5139961 (1992-08-01), Solheim et al.
patent: 5717241 (1998-02-01), Malhi
patent: 2010/0252860 (2010-10-01), Yang et al.
Ko Ching-Chung
Lee Tung-Hsing
Yang Ming-Tzong
Zeng Zheng
Hsu Winston
Margo Scott
Mediatek Inc.
Prenty Mark
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