Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Patent
1997-11-12
2000-01-18
Jackson, Jr., Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
257273, 257350, 257378, 257564, H01L 29772, H01L 27085
Patent
active
060159820
ABSTRACT:
The invention relates to a semiconductor device and a method in this device, wherein the semiconductor device operates completely or partly in lateral extension. The semiconductor device comprises at least two high-voltage lateral bipolar transistors with at least two mutually opposite emitter/base regions, which are placed at the surface of the epi-taxial layer at a mutual distance such that an intermediate common collector region is formed. The common collector region can be completely depleted when the device has a voltage applied and by using a lateral depletion of said collector region, the voltage durability of the semiconductor device can be determined lithographically by the distance between the doped regions comprised in the device. Furthermore, undesired parasitic components, which are dependent on the quality of the active layer of the device, resistivity and substrate potential, can be eliminated or suppressed.
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Jackson, Jr. Jerome
Telefonaktiebolaget LM Ericsson
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