Lateral bidirectional shielded notch FET

Details Lateral bidirectional shielded notch FET Lateral bidirectional shielded notch FET

1982-06-21

1986-02-18

Clawson, Jr., Joseph E.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307584, 357 234, 357 238, 357 2314, 357 39, 357 41, 357 43, 357 55, 357 86, H03K 17689

Patent

active

045715122

ABSTRACT:
Lateral FET structure is disclosed for bidirectional power switching, including AC application. Voltage blocking capability is substantially increased by a shielding electrode insulated between first and second gate electrodes in a notch between laterally spaced source regions and channel regions joined by a common drift region around the bottom of the notch. The shielding electrode prevents the electric field gradient toward the gate electrode on one side of the notch from inducing depletion in the drift region along the opposite side of the notch. This prevents unwanted inducement of conduction channels in the drift region during the OFF state of the FET. High density, high voltage, plural FET structure is disclosed.

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