Lateral bidirectional dual notch FET with non-planar main electr

Details Lateral bidirectional dual notch FET with non-planar main electr Lateral bidirectional dual notch FET with non-planar main electr

1982-06-21

1986-03-04

Clawson, Jr., Joseph E.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307584, 357 234, 357 238, 357 2314, 357 39, 357 43, 357 86, 357 55, 357 59, H03K 17687

Patent

active

045742073

ABSTRACT:
Lateral FET structure is disclosed for bidirectional power switching, including AC appliction. Main electrodes extend downwardly into and through respective source regions and at least into regions having respective channel portions. Notch gate structure extends into the drift region and separates the main electrodes and the respective source regions and channels. High density, high voltage plural FET structure is disclosed.

REFERENCES:
patent: 3798514 (1974-03-01), Hayashi et al.
patent: 4199774 (1980-04-01), Plummer
Y. Hayashi et al., "Exp. Fab. of Non-Planar DSA-MOS Trans. & Their Char.," Bull. Electro. Tech. Lab. (Japan), vol. 40, #4-5, 1976, pp. 328-337.
P. Ou-Yang, "Double Ion Implanted V-MOS Tech.," IEEE J. of S.-S. Ckts., vol. SC-12, #1, Feb. 1977, pp. 3-10.
J. Tihanyi, "Funct Integ. of Power MOS and Bipolar Devices," Proc. 1980, IEEE IEDM, Dec. 1980, pp. 75-78.
"A Parametric Study of Power MOSFET'", C. Hu, IEEE Electron Device Conference; Paper CH 1461-3/79, 0000-0385.
IEEE Transactions Electron Devices, vol. ED-25; #10; Oct., 1978.
"UMOS Transistors on (110) Silicon", Ammar & Rogers, Transactions IEEE; ED-27; May, 1980; pp. 907-914.
"Optimum Doping Profile for Minimum Ohmic Resistance and High Breakdown Voltage", C. Hu; IEEE Transactions Electron Devices; vol. ED-26; 1970; pp. 243-244.

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