Late programming using a silicon nitride interlayer

Details Late programming using a silicon nitride interlayer Late programming using a silicon nitride interlayer

1981-05-28

1982-12-21

Ozaki, G.

Metal working

Method of mechanical manufacture

Assembling or joining

29576B, 29577C, 29578, 148187, H01L 2122

Patent

active

043641652

ABSTRACT:
A method of making a ROM and encoding it late in the method. A silicon nitride layer etch mask is used for encoding by ion implantation, avoiding the need for a separate encoding mask.

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