Late programming mask ROM and process for producing the same

Fishing – trapping – and vermin destroying

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

437 46, 437 48, 437915, H01L 21824.6

Patent

active

054260663

ABSTRACT:
A late programming mask ROM integrated circuit and a process for producing the same. The mask ROM integrated circuit has a silicon substrate, and a plurality of memory cells formed on the silicon substrate. Each memory cell consists of a transistor element and a diode element electrically connected in series. Each transistor element has a drain layer, a channel layer, a source layer all stacked on the silicon substrate in a substantially vertical direction to form an upright drain/channel/source structure region, and a gate electrode region formed on the silicon substrate. The gate electrode regions and the upright drain/channel/source structure regions of the transistor elements are alternately arranged in an adjacent fashion along a substantially horizontal direction. Each diode element is formed by one upright drain/channel/source structure and a diode layer formed on or under the upright drain/channel/source structure.

REFERENCES:
patent: 5096845 (1992-03-01), Inoue
patent: 5208172 (1993-05-01), Fitch et al.
patent: 5250457 (1993-10-01), Dennison
patent: 5308778 (1994-05-01), Fitch et al.
patent: 5330924 (1994-07-01), Huang et al.
patent: 5358887 (1994-10-01), Hong

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Late programming mask ROM and process for producing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Late programming mask ROM and process for producing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Late programming mask ROM and process for producing the same will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1843936

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.