Late process method and apparatus for trench isolation

Details Late process method and apparatus for trench isolation Late process method and apparatus for trench isolation

1996-11-07

1999-07-06

Hardy, David B.

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

257520, 257501, 257347, H01L 2902

Patent

active

059201088

ABSTRACT:
Trenches 72 are formed in substrate 17 late in the fabrication process. In order to avoid trench sidewall stresses that cause defects in the substrate monocrystalline lattice, the trenches are filled after a final thick thermal oxide layer, such as a LOCOS layer 25, is grown. The trenches 72 are also filled after a final deep diffusion, i.e. a diffusion in excess of one micron.

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