Latching transistor

Details Latching transistor Latching transistor

1980-02-28

1982-10-26

Clawson, Jr., Joseph E.

357 20, 357 36, 357 86, H01L 2974

Patent

active

043565034

ABSTRACT:
A latching transistor is described having both high current capacity and high turn-off gain. A selectively shorted anode emitter provides a four-layer structure capable of sustaining current flow only under those portions of a cathode emitter adjacent interdigitated gate fingers and particularly not in the center of the cathode emitter fingers or beneath contact areas. Additionally, a control region is provided for conveniently adjusting the amount of anode emitter shorting for optimizing turn-off speed, foward voltage drop, and gate triggering characteristics.

REFERENCES:
patent: 3324359 (1967-06-01), Gentry
patent: 3504242 (1970-03-01), Wolley
patent: 3609476 (1971-09-01), Storm
patent: 3619738 (1971-11-01), Otsuka
patent: 3914781 (1975-10-01), Matsushita et al.

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