Latch-up resistant bipolar transistor with trench IGFET and buri

Details Latch-up resistant bipolar transistor with trench IGFET and buri Latch-up resistant bipolar transistor with trench IGFET and buri

1994-05-26

1996-01-30

Ngo, NgaV.

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Five or more layer unidirectional structure

257133, 257137, 257138, 257331, 257332, 257334, 257378, H01L 2974, H01L 31111

Patent

active

054882362

ABSTRACT:
A gate-controlled bipolar transistor with buried collector includes a wide base bipolar transistor in a semiconductor substrate having a trench at a face thereof. A dual-channel insulated-gate field effect transistor (IGFET) is also included adjacent a sidewall of the trench for providing gated turn-on and turn-off control of the bipolar transistor. The bipolar transistor includes a buried collector region at a bottom of the trench, which is electrically connected to a cathode contact at the face. An emitter of the transistor is electrically connected to an anode contact at an opposing face of the substrate. For turn-on, the base of the bipolar transistor is electrically connected to the cathode contact upon the application of a gate bias signal to the IGFET. By electrically connecting the base to the cathode contact, forward conduction can be established once the anode contact is appropriately biased relative to the cathode contact. Latch-up can also be prevented by using the buried collector region as a diverter region to prevent the regenerative conduction between P--N--P--N coupled regions of the transistor.

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