Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide
Patent
1997-07-10
1999-10-19
Hardy, David B.
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
Diamond or silicon carbide
257330, 257378, 257133, H01L 310312
Patent
active
059693789
ABSTRACT:
A MOS bipolar transistor is provided which includes a silicon carbide npn bipolar transistor formed on a bulk single crystal n-type silicon carbide substrate and having an n-type drift layer and p-type base layer. A silicon carbide nMOSFET is formed adjacent the npn bipolar transistor such that a voltage applied to the gate of the nMOSFET causes the npn bipolar transistor to enter a conductive state. The nMOSFET has a source and a drain formed so as to provide base current to the npn bipolar transistor when the bipolar transistor is in a conductive state. Also provide are means for converting electrons flowing between the source and the drain into holes for injection into the p-type base layer. Unit cells and methods of forming such devices are also provided.
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Cree Research Inc.
Hardy David B.
Summa Philip
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