Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide
Patent
1998-05-21
2000-09-19
Crane, Sara
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
Diamond or silicon carbide
257212, 257623, H01L 310312
Patent
active
06121633&
ABSTRACT:
A MOS bipolar transistor is provide which includes a silicon carbide npn bipolar transistor formed on a bulk single crystal n-type silicon carbide substrate and having an n-type drift layer a p-type base layer. Preferably the base layer is formed by epitaxial growth and formed as a mesa. A silicon carbide nMOSFET is formed adjacent the npn bipolar transistor such that a voltage applied to the gate of the nMOSFET causes the npn bipolar transistor to enter a conductive state. The nMOSFET has a source and a drain formed so as to provide base current to the npn bipolar transistor when the bipolar transistor is in a conductive state. Also included are means for converting electron current flowing between the source and the drain into hole current for injection into the p-type base layer. Means for reducing field crowding associated with an insulating layer of said nMOSFET may also be provided.
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Palmour John W.
Singh Ranbir
Crane Sara
Cree Research Inc.
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