Latch circuit

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

307DIG1, H03K 526

Patent

active

042950619

ABSTRACT:
A latch circuit suited for a high-density semiconductor integrated circuit is disclosed, which comprises a first inverter circuit, a gating means for transferring an input signal to an input terminal of the first inverter circuit, a second inverter circuit having an input terminal coupled to the output of the first inverter circuit, and a transferring means for applying the output of the second inverter circuit to the input terminal of the first inverter circuit, the transferring means having substantially equal impedance characteristics in both directions.

REFERENCES:
patent: 3058068 (1962-10-01), Hinrichs et al.
patent: 3882331 (1975-05-01), Sasaki et al.
patent: 3925689 (1975-12-01), Rubenstein
patent: 4060737 (1977-11-01), Gosney
patent: 4084129 (1978-04-01), Katakura
"Insulated Gate Field Effect Transistor Sense Amplifier Latch" by J. G. Surgent, IBM Tech. Discl. Bull. vol. 13, No. 9, Feb. 1971, pp. 2670, 2671.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Latch circuit does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Latch circuit, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Latch circuit will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-933028

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.