Metal fusion bonding – Process – Plural joints
Reexamination Certificate
2008-06-18
2010-06-08
Stoner, Kiley (Department: 1793)
Metal fusion bonding
Process
Plural joints
C228S215000, C228S248100
Reexamination Certificate
active
07731076
ABSTRACT:
A semiconductor device manufacturing apparatus includes a substrate holding section that holds a semiconductor wafer substrate, a discharge mechanism that discharges liquid drops of metal paste from a discharge nozzle toward a surface of the semiconductor wafer substrate, and a driving mechanism that moves at least one of the substrate holding section and the discharge nozzle. A control section is provided to control the discharge and driving mechanisms so as to adhere the metal paste to the surface. The semiconductor wafer substrate includes a terminal unit formed from two or more electrically separated terminals connected to a device circuit and an insulation layer having an opening in a formation position of the terminal unit. Further, the control section controls the discharge and driving mechanisms to selectively coat the opening of the semiconductor wafer substrate with the metal paste overlying the terminal unit to be electrically connected.
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Japanese Office Action; Jun. 21, 2009; 3 pages.
Dickstein & Shapiro LLP
Ricoh & Company, Ltd.
Stoner Kiley
LandOfFree
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