Metal fusion bonding – With control means responsive to sensed condition – Work-responsive
Reexamination Certificate
2008-07-29
2008-07-29
Stoner, Kiley (Department: 1793)
Metal fusion bonding
With control means responsive to sensed condition
Work-responsive
C228S041000, C228S043000, C228S248100
Reexamination Certificate
active
07404511
ABSTRACT:
A semiconductor device manufacturing apparatus includes a substrate holding section that holds a semiconductor wafer substrate, a discharge mechanism that discharges liquid drops of metal paste from a discharge nozzle toward a surface of the semiconductor wafer substrate, and a driving mechanism that moves at least one of the substrate holding section and the discharge nozzle. A control section is provided to control the discharge and driving mechanisms so as to adhere the metal paste to the surface. The semiconductor wafer substrate includes a terminal unit formed from two or more electrically separated terminals connected to a device circuit and an insulation layer having an opening in a formation position of the terminal unit. Further, the control section controls the discharge and driving mechanisms to selectively coat the opening of the semiconductor wafer substrate with the metal paste overlying the terminal unit to be electrically connected.
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Dickstein & Shapiro LLP
Ricoh & Company, Ltd.
Stoner Kiley
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