Laser trimming of resistors over dielectrically isolated islands

Details Laser trimming of resistors over dielectrically isolated islands Laser trimming of resistors over dielectrically isolated islands

1984-05-15

1986-06-10

Pianalto, Bernard D.

Coating processes

Electrical product produced

Welding electrode

219121LJ, 427102, 427259, 427264, 427265, 427276, 427309, 427344, B05D 306

Patent

active

045942650

ABSTRACT:
Single crystal dielectrically isolated islands are formed providing a substantially non-reflective or indentured silicon surface before the application of the dielectric isolation layer and the polycrystalline support. Thin film resistor material is formed and delineated on an insulative layer over the single crystal island juxtaposed to the substantially non-reflective bottom dielectric isolation. The thin film resistive layer is trimmed using a laser.

REFERENCES:
patent: 3947801 (1976-03-01), Bube
patent: 4081653 (1978-03-01), Koo et al.
patent: 4179310 (1979-12-01), Compton et al.
patent: 4190854 (1980-02-01), Redfern
patent: 4272775 (1981-06-01), Compton et al.
patent: 4468414 (1984-08-01), Van Vonno

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