Laser trim protection process

Details Laser trim protection process Laser trim protection process

1978-07-03

1979-12-18

Rutledge, L. Dewayne

Metal treatment

Compositions

Heat treating

219121L, 357 18, 357 91, 427 531, H01L 21268, B23K 2700

Patent

active

041793102

ABSTRACT:
An element of an integrated circuit, such as an ion implanted region or a metal layer, may be laser trimmed without exposing P-N junctions or other circuit elements not to be trimmed to damage by the laser through use of the present protection process and structure. In the process, an oxide through which the laser trimming is carried out is formed over a selected portion of the circuit to be trimmed by the laser. A bare layer of a metal reflective to the laser radiant energy beam, such as aluminum, gold or silver, is formed surrounding the selected portion of the circuit. The selected portion of the integrated circuit is then trimmed with the laser. The oxide promotes trimming in the selected area by absorbing the laser radiant energy beam. The bare metal layer protects the portion of the integrated circuit underlying it by reflecting most of its energy.

REFERENCES:
patent: 3585088 (1971-06-01), Schwuttle et al.
patent: 3699649 (1972-10-01), McWilliams
patent: 3771026 (1973-11-01), Asai et al.
Joshi et al, "Masking . . . Laser Induced Diffusion", IBM-TDB, 13 (1970) 928.
Chang, "Writing . . . on a Si Wafer", IBM-TDB, 20 (1977) 2459.
Fairfield et al, "Si Diode . . . by Laser Irradiation", Solid St. Electronics, 11 (1968), 1175-1176.

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