Laser treating implanted semiconductor surface through photo-res

Details Laser treating implanted semiconductor surface through photo-res Laser treating implanted semiconductor surface through photo-res

1983-02-16

1985-02-19

Upendra, Roy

Metal treatment

Compositions

Heat treating

29576T, 148187, 357 91, 427 531, H01L 21263

Patent

active

045003653

ABSTRACT:
A method of manufacturing a semiconductor device wherein a surface region of a semiconductor substrate is selectively heated by irradiation of a laser beam of a wavelength .lambda.. The method includes the steps of opening a window through an insulating layer formed on the surface of the semiconductor substrate, coating on the entire surface of the substrate a light transmitting film having an index n of refraction in such a manner that the thickness of the film over the exposed window part is equal, or substantially equal, to the value of .lambda./4n or .lambda./4n times an odd number, and then carrying out the irradiation of the laser beam. A photo-resist, thermally grown silicon dioxide film, silicon dioxide film by chemical vapor deposition, CVD phosphosilicate glass, or a glass film formed by coating hydroxide of silicon or its high molecule polymer is employed as the light transmitting film.

REFERENCES:
patent: 3660171 (1972-05-01), Tsuchimoto et al.
patent: 3852119 (1974-12-01), Gosney et al.
patent: 4193183 (1980-03-01), Klein
patent: 4289381 (1981-09-01), Garvin et al.
patent: 4335198 (1982-06-01), Hanada et al.
Fowler et al., IBM-TDB, 22 (May 1980), pp. 5473-5474.
Sealy et al., In AIP Conf. Proceedings #50, ed. Ferris et al., Laser-Solid Interactions . . . , 1978, N.Y., p. 610.

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