Coherent light generators – Particular component circuitry – Optical pumping
Patent
1988-02-22
1989-07-04
Sikes, William L.
Coherent light generators
Particular component circuitry
Optical pumping
372 43, 372 50, H01S 300
Patent
active
048457230
ABSTRACT:
A laser transmitter arrangement includes a plurality of laterally coupled semiconductor lasers along with drive components integrated on a single semiconductor body. The drive components include drop resistors, an inductance element, a capacitance element and are all applied to an insulating layer on the surface of the semiconductor body. The resistors are formed by interconnects, while the inductance element is a spiral interconnect and the capacitance element is formed by interconnects lying over one another with an intervening dielectric material. Electrical connection from contact surfaces of the semiconductor lasers to the drive components is provided by the interconnects. The semiconductor body also contains external contacting surfaces for a DC source and for a high frequency source.
REFERENCES:
Publication by Nakano et al., titled "Monolithic Integration of Laser Diodes, Photomonitors, and Laser Driving and Monitoring Circuits on a Semi-Insulating GaAs", Journal of Lightwave Tech., vol. LT-4, No. 6, Jun. 1986, pp. 574-582.
Publication by Su et al., entitled "Ultra-High-Speed Modulation of 1.3-um InGaAsP Diode Lasers", pp. 1568-1578, IEEE Journal of Quantum Electronics, vol. QE-22, No. 9, Sep. 86.
Publication by Yamamoto et al., entitled "Continuous Control of Coherence Length in Separately Pumped (AlGa) As Lasers", Appl. Phys. Lett., 49(18)3, Nov. 1986, pp. 1129-1131.
Publication entitled "Monolithic Integration of a GaAlAs Injection Laser with a Schottky-Gate Field Effect Transistor", Appl. Phys. Lett, 36(3), 2/1/80, pp. 181-183 by Fukuzawa et al.
Publication entitled: "Very High Frequency GaAlAs Laser Field-Effect Transistor Monolithic Integrated Circuit", Appl. Phys. Lett, 41(2), 7/15/82, pp. 126-128, by Ury et al.
Publication by Katz, entitled "Phase-Locked Semiconductor Laser Array with Separate Contacts", pp. 521-523, Appl. Phys. Lett, 43(6), 9/15/83.
Heinen Jochen
Kappeler Franz
Epps Georgia Y.
Siemens Aktiengesellschaft
Sikes William L.
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