Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Forming lateral transistor structure
Reexamination Certificate
2005-08-16
2005-08-16
Smoot, Stephen W. (Department: 2813)
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
Forming lateral transistor structure
C438S378000, C438S380000, C438S535000, C438S667000
Reexamination Certificate
active
06930009
ABSTRACT:
A laser apparatus and methods are disclosed for synthesizing areas of wide-bandgap semiconductor substrates or thin films, including wide-bandgap semiconductors such as silicon carbide, aluminum nitride, gallium nitride and diamond to produce electronic devices and circuits such as integral electronic circuit and components thereof.
REFERENCES:
patent: 5425860 (1995-06-01), Truher et al.
patent: 5837607 (1998-11-01), Quick
patent: 6054375 (2000-04-01), Quick
Frijouf Rust & Pyle P.A.
Smoot Stephen W.
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