Laser synthesized wide-bandgap semiconductor electronic...

Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Forming lateral transistor structure

Reexamination Certificate

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C438S378000, C438S380000, C438S535000, C438S667000

Reexamination Certificate

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06930009

ABSTRACT:
A laser apparatus and methods are disclosed for synthesizing areas of wide-bandgap semiconductor substrates or thin films, including wide-bandgap semiconductors such as silicon carbide, aluminum nitride, gallium nitride and diamond to produce electronic devices and circuits such as integral electronic circuit and components thereof.

REFERENCES:
patent: 5425860 (1995-06-01), Truher et al.
patent: 5837607 (1998-11-01), Quick
patent: 6054375 (2000-04-01), Quick

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