Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1983-08-22
1984-07-17
Smith, Alfred E.
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
313542, G21K 504, H01J 4006, H01J 4016
Patent
active
044608314
ABSTRACT:
An electron beam generator particularly adapted for direct-write semiconductor lithography applications is disclosed which includes a photoemissive cathode, a modulable laser for illuminating the photoemissive cathode, and light optics to create an optical pattern on the cathode. The photoemissive cathode is composed of a light transmissive substrate onto which is deposited an optically semitransparent, electrically conductive film. This film in turn is coated with a thin layer of a photoemissive substance such as cesium antimonide so that the photoemissive cathode emits an intense and substantially monochromatic beam of electrons upon laser light illumination. The emitted electron beam is configured in accordance with the optical pattern created on the cathode, and in passing through successive electron optical devices is further shaped and sized for use, for example, in lithographically generating very large scale integrated (VLSI) circuits on semiconductors.
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Lee Chunghsin
Oettinger Peter E.
Berman Jack I.
Messenger Herbert E.
Smith Alfred E.
Thermo Electron Corporation
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