Radiant energy – Ion generation – Field ionization type
Reexamination Certificate
2006-10-17
2006-10-17
Vanore, David A. (Department: 2881)
Radiant energy
Ion generation
Field ionization type
C250S42300F
Reexamination Certificate
active
07122806
ABSTRACT:
A laser stimulated atom probe for atom probe imaging of dielectric and low conductivity semiconductor materials is disclosed. The laser stimulated atom probe comprises a conventional atom probe providing a field emission tip and ion detector arrangement, a laser system providing a laser short laser pulse and synchronous electronic timing signal to the atom probe, and an optical system for delivery of the laser beam onto the field emitting tip apex. Due to enhanced absorption, it is also possible to realize a photo ionization mechanism, wherein the laser stimulates electronic transitions from the more extended surface atoms, thereby ionizing the surface atom.
REFERENCES:
patent: 5061850 (1991-10-01), Kelly et al.
patent: 5347132 (1994-09-01), Holzman et al.
patent: 5440124 (1995-08-01), Kelly et al.
patent: 0231247 (1990-10-01), None
patent: WO 87/00682 (1987-01-01), None
Kellogg, G. L., “Pulsed-laser atom probe mass spectroscopy,” 1987, J. Phys. E: Sci. Instrum., 20, pp. 125-136.
Cerezo et al., “Application of a position-sensitive detector to atom probe microanalysis,” Rev. Sci. Instrum. 59:6, 862-866, Jun. 1988.
Cerezo et al., “Performance of an energy-compensated three-dimensional atom probe,” Rev. Sci. Instrum. 69:1, 49-58, Jan. 1998.
Forbes, “Field evaporation theory: a review of basic ideas,” Applied Surface Science 87/88, 1-11, 1995.
Keldysh, “The effect of a strong electric field on the optical properties of insulating crystals,” Soviet Physics JETP, 34:7, 5, 788-790, Nov. 1958.
Kellogg et al., “Pulsed-laser atom-probe field-ion microscopy,” J. App. Phys. 51:2, 1184-1193, Feb. 1980.
King et al., “Atom probe analysis and field emission studies of silicon,” J. Vac. Sci. Techno. B 12:2, 705-709, Mar./Apr. 1994.
Liu et al., “Numerical calculation of the temperature evolution and profile of the field ion emitter in the pulsed-laser time-of-flight atom probe,” Rev. Sci. Instrum., 55:11, 1779-1784, Nov. 1984.
Liu et al., “Numerical calculation of the temperature distribution and evolution of the field-ion emitter under pulsed and continuous-wave laser irradiation,” J. Appl. Phys., 59:4, 1334-1340, Feb. 1986.
Nishikawa et al., “Development of a scanning atom probe,” J. Vac. Sci. Technol. B 13:2, 599-602, Mar./Apr. 1995.
Tsong et al., “Energy distributions of pulsed-laser field-desorbed gaseous ions and field-evaporated metal ions: A direct time-of-flight measurement,” Phys. Rev. B, 29:2, 529-542, Jan. 15, 1984.
Tsong, “Field ion image formation,” Surface Science 70, 211-233, 1978.
Tsong et al., “Photon stimulated field ionization,” The Journal of Chemical Physics, 65:6, 2469-2470, Sep. 15, 1976.
Tsong et al., “Pulsed-laser time-of-flight atom-probe field ion microscope,” Rev. Sci. Instrum., 53:9, 1442-1448, Sep. 1982.
Vanore David A.
Vinson & Elkins L.L.P.
LandOfFree
Laser stimulated atom probe characterization of... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Laser stimulated atom probe characterization of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Laser stimulated atom probe characterization of... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3702198