Laser source with broadband spectrum emission

Coherent light generators – Particular active media – Semiconductor

Reexamination Certificate

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C372S096000, C372S099000

Reexamination Certificate

active

07555027

ABSTRACT:
A quantum dot laser operates on a quantum dot ground-state optical transition. The laser has a broadband (preferably ≧15 nm) spectrum of emission and a high output power (preferably ≧100 mW). Special measures control the maximum useful pump level, the total number of quantum dots in the laser active region, the carrier relaxation to the quantum dot ground states, and the carrier excitation from the quantum dot ground states. In one embodiment, a spectrally-selective loss is introduced into the laser resonator in order to suppress lasing on a quantum dot excited-state optical transition, thereby increasing the bandwidth of the emission spectrum.

REFERENCES:
patent: 4100562 (1978-07-01), Sugawara et al.
patent: 4368481 (1983-01-01), Ohashi et al.
patent: 4438447 (1984-03-01), Copeland, III et al.
patent: 4720468 (1988-01-01), Menigaux et al.
patent: 4734910 (1988-03-01), Izadpanah
patent: 4759023 (1988-07-01), Yamaguchi
patent: 4839884 (1989-06-01), Schloss
patent: 4918497 (1990-04-01), Edmond
patent: 4959540 (1990-09-01), Fan et al.
patent: 4980568 (1990-12-01), Merrick et al.
patent: 5190883 (1993-03-01), Menigaux et al.
patent: 5193131 (1993-03-01), Bruno
patent: 5208822 (1993-05-01), Haus et al.
patent: 5214664 (1993-05-01), Paoli
patent: 5274649 (1993-12-01), Hirayama et al.
patent: 5291010 (1994-03-01), Tsuji
patent: 5298787 (1994-03-01), Bozler et al.
patent: 5321786 (1994-06-01), Valette et al.
patent: 5345557 (1994-09-01), Wendt
patent: 5357122 (1994-10-01), Okubora et al.
patent: 5382810 (1995-01-01), Isaksson
patent: 5463229 (1995-10-01), Takase et al.
patent: 5523557 (1996-06-01), Bruno
patent: 5536974 (1996-07-01), Nishiguchi
patent: 5539763 (1996-07-01), Takemi et al.
patent: 5548433 (1996-08-01), Smith
patent: 5568499 (1996-10-01), Lear
patent: 5569934 (1996-10-01), Fujii et al.
patent: 5604361 (1997-02-01), Isaksson
patent: 5608231 (1997-03-01), Ugajin et al.
patent: 5633527 (1997-05-01), Lear
patent: 5663592 (1997-09-01), Miyazawa et al.
patent: 5673284 (1997-09-01), Congdon et al.
patent: 5705831 (1998-01-01), Uemura et al.
patent: 5710436 (1998-01-01), Tanamoto et al.
patent: 5728605 (1998-03-01), Mizutani
patent: 5767508 (1998-06-01), Masui et al.
patent: 5801872 (1998-09-01), Tsuji
patent: 5802084 (1998-09-01), Bowers et al.
patent: 5812574 (1998-09-01), Takeuchi et al.
patent: 5812708 (1998-09-01), Rao
patent: 5825051 (1998-10-01), Bauer et al.
patent: 5828679 (1998-10-01), Fisher
patent: 5854804 (1998-12-01), Winer et al.
patent: 5889903 (1999-03-01), Rao
patent: 5940424 (1999-08-01), Dietrich et al.
patent: 5945720 (1999-08-01), Itatani et al.
patent: 5946438 (1999-08-01), Minot et al.
patent: 6011296 (2000-01-01), Hassard et al.
patent: 6031243 (2000-02-01), Taylor
patent: 6031859 (2000-02-01), Nambu
patent: 6043515 (2000-03-01), Kamiguchi et al.
patent: 6052400 (2000-04-01), Nanbu et al.
patent: 6066860 (2000-05-01), Katayama et al.
patent: 6093939 (2000-07-01), Artigue et al.
patent: 6232142 (2001-05-01), Yasukawa
patent: 6245259 (2001-06-01), Hohn et al.
patent: 6288410 (2001-09-01), Miyazawa
patent: 6310372 (2001-10-01), Katayama et al.
patent: 6318901 (2001-11-01), Heremans et al.
patent: 6320204 (2001-11-01), Hirabayashi et al.
patent: 6346717 (2002-02-01), Kawata
patent: 6392342 (2002-05-01), Parikka
patent: 6393183 (2002-05-01), Worley
patent: 6403395 (2002-06-01), Hirabayashi et al.
patent: 6407438 (2002-06-01), Severn
patent: 6528779 (2003-03-01), Franz et al.
patent: 6542522 (2003-04-01), Arahira
patent: 6600169 (2003-07-01), Stintz et al.
patent: 6611007 (2003-08-01), Thompson et al.
patent: 6625337 (2003-09-01), Akiyama
patent: 6628686 (2003-09-01), Sargent
patent: 6628691 (2003-09-01), Hatori
patent: 6645829 (2003-11-01), Fitzergald
patent: 6677655 (2004-01-01), Fitzergald
patent: 6680495 (2004-01-01), Fitzergald
patent: 6701049 (2004-03-01), Awad et al.
patent: 6768754 (2004-07-01), Fafard
patent: 6782021 (2004-08-01), Huang et al.
patent: 6813423 (2004-11-01), Goto et al.
patent: 6816525 (2004-11-01), Stintz et al.
patent: 6826205 (2004-11-01), Myers et al.
patent: 6862312 (2005-03-01), Fafard
patent: 6870178 (2005-03-01), Asryan et al.
patent: 2002/0030185 (2002-03-01), Thompson et al.
patent: 2002/0085605 (2002-07-01), Hatori
patent: 2003/0015720 (2003-01-01), Lian et al.
patent: 2003/0025118 (2003-02-01), Yamazaki et al.
patent: 2003/0063647 (2003-04-01), Yoshida et al.
patent: 2003/0128728 (2003-07-01), Shimizu et al.
patent: 2003/0165173 (2003-09-01), Helbing et al.
patent: 2004/0009681 (2004-01-01), Fafard
patent: 2004/0057485 (2004-03-01), Ohki et al.
patent: 2004/0065890 (2004-04-01), Alphonse et al.
patent: 2004/0109633 (2004-06-01), Pittman et al.
patent: 2004/0228564 (2004-11-01), Gunn et al.
patent: 2005/0008048 (2005-01-01), McInerney et al.
patent: 2005/0047727 (2005-03-01), Shin et al.
patent: 2005/0175044 (2005-08-01), Zakhleniuk et al.
patent: 2006/0227825 (2006-10-01), Kovsh et al.
patent: 1341333 (2003-09-01), None
Eliseev (Technical Paper: Tunable Grating-Coupled Laser Oscillation and Spectral Hole Burning in an InAs Quantum-Dot Laser Diode, IEEE Journal of Quantum Electronics, vol. 36, Apr. 2000).
Chuang S. L., Physics of Optoelectronic Devices. New York: John Wiley & Sons, 1995.
Bagley et al. “Broadband Operation of InGaAsP-InGaAs Grin-SC-MQW BH Amplifiers with 115mW Output Power.” Electronics Letters, IEE Stevenage, GB, vol. 26, No. 8, Apr. 14, 1990.
International Search Report and Written Opinion dated Mar. 14, 2008 for PCT/EP2007/010313.
P. Eliseev, Tunable Grating-Coupled Laser Oscillation and Spectral Hole Burning in an InAs Quantum-Dot Laser Diode, IEEE Journal of Quantum Electronics, Apr. 2000, pp. 479-485, vol. 36 No. 4.
A.R. Kovsh, et al., “3.5 W CW Operation of quantum dot laser,” Electron. Lett. vol. 35, N. 14 Jul. 1999, pp. 1161-1163.
A.E. Zhukov, et al., “Control of the emission wavelength of self-organized quantum dots: main achievements and present status,” Semicond. Sci. Technol. vol. 14, N.6, Apr. 1999, pp. 575-581.
G. Park, et al., “Low-threshold oxide-confined 1.3-um quantum-dot laser,” IEEE photon technol. Lett. vol. 13, N. 3, Mar. 2000, pp. 230-232.
X. Huang, et al., “Passive mode-locking in 1.3 um two-section InAs quantum dot lasers,” Appl. Phys. Lett. vol. 78, N. 19, May 2001, pp. 2825-2827.
M.G. Thompson, et al., “10 GHz hybrid modelocking of monolithic InGaAs quantum dot lasers,” IEE Electron. Lett. vol. 39, N. 15, Jul. 2003, pp. 1121-1122.
M. Kuntz, et al., “35 GHz mode-locking of 1.3 mm quantum dot lasers,” Appl. Phys. Lett. vol. 85, N. 5, Aug. 2004, pp. 843-845.
A.E. Avrutin et al., “Monolithic and Multi-GigaHertz mode-locked semiconductors lasers: Constructions, experiments, models and applications,” IEE Proc. Optoelectron. vol. 147, N. 4, Aug. 2000, pp. 251-278.
K.A. Williams et al., “Long wavelength monolithic mode-locked diode lasers,” New Journal of Physics, vol. 6, N. 179, Nov. 2004, pp. 1-30.
M.G. Thompson, et al. “Transform-limited optical pulses from 18 GHz monolithic modelocked quantum dot lasers operating at 1.3 um,” IEE Electron. Lett. vol. 40, N. 5, Mar. 2004, pp. 346-347.
Jinno, “Correlated and uncorrected timing jitter in gain-switched laser diodes,” IEEE Phot. Tech. Lett., vol. 5, pp. 1140-1143 (1993).
Leonard et al., “Direct formation of quantum-sized dots from uniform coherent islands in InGaAs on GaAs surfaces,” Appl. Phys. Lett., vol. 63, pp. 3203-3205 (1993).
Lester et al., “Optical Characteristics of 1.24-um InAs Quantum-Dot Laser Diodes,” IEEE Phot. Tech. Lett., vol. 11, pp. 931-933 (1999).
Liu et al., “Gain-Switched picosecond pulse (<10ps) generation from 1.3 um InGaAsP Laser Diodes,” IEEE Quan. Elec., vol. 25, pp. 1417-1425 (1989).
Madhukar et al., “Nature of strained InAs three-dimensional island formation and distribution on GaAs(100),” Appl. Phys. Lett., vol. 64, pp. 2727-2729 (1994).
Moison et al., “Self-organized growth o

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