Laser separation of semiconductor elements formed in a wafer of

Details Laser separation of semiconductor elements formed in a wafer of Laser separation of semiconductor elements formed in a wafer of

1997-02-04

1999-07-13

Evans, Geoffrey S.

Electric heating

Metal heating

By arc

438463, B23K 2600

Patent

active

059222247

ABSTRACT:
A method of separating semiconductor elements (2) formed in a wafer of semiconductor material (1). A score (8) is formed in a surface (3) of the wafer (1) through local evaporation of semiconductor material by heat originating from radiation (10). This radiation (10) is generated by a laser (11) and focused on the wafer (1) by an optical system (12). The wafer (1) is moved relative to the radiation (10) focused thereon along a path (9) which follows the score (8) to be formed. The radiation (10) of the laser (11) is focused on the wafer (1) in the form of at least two beams (14 and 15), the wafer (1) being moved relative to the beams (14 and 15) such that the beams (14 and 15) travel the same path (9) one after the other. A deeper score (8) can be formed than by an unsplit beam of the same energy as the two beams together.

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