Laser scribe on front side of semiconductor wafer

Details Laser scribe on front side of semiconductor wafer Laser scribe on front side of semiconductor wafer

2003-02-10

2008-03-18

Estrada, Michelle (Department: 2823)

Semiconductor device manufacturing: process

With measuring or testing

Optical characteristic sensed

C438S007000, C257SE21237, C428S209000, C428S069000, C216S004000

Reexamination Certificate

active

07344900

ABSTRACT:
Disclosed are a semiconductor wafer (10) having a front side laser scribe (22) and the methods for manufacturing the same. The methods of the invention include the formation of a scribe foundation (12) on the front side of the semiconductor wafer (10) designed to accept laser scribing (22), and laser scribing the scribe foundation (12). Disclosed embodiments include a semiconductor wafer (10) having a scribe foundation (12) of layered dielectric (30) and metal (34) on the front side. According to disclosed embodiments of the invention, the formation of a scribe foundation (12) is performed in combination with the formation of a top level metal layer (34) on the semiconductor wafer (10) methods for manufacturing.

REFERENCES:
patent: 4825093 (1989-04-01), Kiriseko et al.
patent: 5777743 (1998-07-01), Bacchi et al.
patent: 2002/0031899 (2002-03-01), Manor

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