Laser scanning method for annealing, glass flow and related proc

Electric heating – Metal heating – By arc

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219121LW, B23K 2700

Patent

active

044157940

ABSTRACT:
A method for scanning the top surface of a semiconductor wafer prevents damage to the wafer (11) by ensuring that the laser beam (13) does not cross over the edge (11a) of the wafer during the scanning process nor approach within one (1) to two (2) millimeters to the edge of the wafer.

REFERENCES:
patent: 3900737 (1975-08-01), Collier et al.
patent: 4131487 (1978-12-01), Pearce et al.
patent: 4316074 (1982-02-01), Daly

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