Laser programming of semiconductor devices using diode make-link

Details Laser programming of semiconductor devices using diode make-link Laser programming of semiconductor devices using diode make-link

1989-09-28

1991-04-16

Carroll, J.

357 41, 357 42, 357 86, H01L 2702

Patent

active

050087290

ABSTRACT:
A semiconductor device is programmed by a laser beam which causes a PN junction in a silicon substrate to be permanently altered. This produces a leakage path between a program node and a tank region in the substrate; the program node can be an input to a transistor in a CMOS circuit, for example, so this node will always hold the transistor on or off depending whether or not it has been laser-programmed. Preferably, the tank region is of opposite type compared to the substrate, so the program node is electrically isolated from the substrate in either case.

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(No author given), "Photon Assisted Programming Technique for Polysilicon Fuses and Anti-Fuses", IBM Technical Disclosure Bulletin, vol. 27, No. 10A, 3/85, pp. 5715-5716.
North et al., "Laser Coding of Bipolar Read-Only Memories", IEEE Journal of Solid-State Circuits, vol. SC-11, No. 4, 8/76, pp. 500-505.

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