Semiconductor device manufacturing: process – Including control responsive to sensed condition – Optical characteristic sensed
Reexamination Certificate
2007-05-25
2010-06-22
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Including control responsive to sensed condition
Optical characteristic sensed
C257SE21521, C216S085000
Reexamination Certificate
active
07741131
ABSTRACT:
A solution to an interference effect problem associated with laser processing of target structures entails adjusting laser pulse energy or other laser beam parameter, such as laser pulse temporal shape, based on light reflection information of the target structure and passivation layers stacked across a wafer surface or among multiple wafers in a group of wafers. Laser beam reflection measurements on a target link measurement structure and in a neighboring passivation layer area unoccupied by a link enable calculation of the laser pulse energy adjustment for a more consistent processing result without causing damage to the wafer. For thin film trimming on a wafer, similar reflection measurement information of the laser beam incident on the thin film structure and the passivation layer structure with no thin film present can also deliver the needed information for laser parameter selection to ensure better processing quality.
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Harris Steve
Sun Yunlong
Coleman W. David
Electro Scientific Industries Inc.
Stoel Rives LLP
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