Laser processing method and semiconductor chip

Details Laser processing method and semiconductor chip Laser processing method and semiconductor chip

2011-05-24

2011-05-24

Sandvik, Benjamin P (Department: 2893)

Semiconductor device manufacturing: process

Semiconductor substrate dicing

C438S033000, C438S068000, C438S113000, C438S114000, C438S458000, C438S463000, C257S620000, C257SE21596, C257SE21599, C219S121670, C219S121680, C219S121720

Reexamination Certificate

active

07947574

ABSTRACT:
A laser processing method is provided, which, even when a substrate formed with a laminate part including a plurality of functional devices is thick, can cut the substrate and laminate part with a high precision.This laser processing method irradiates a substrate4with laser light L while using a rear face21as a laser light entrance surface and locating a light-converging point P within the substrate4, so as to form modified regions71, 72, 73within the substrate4. Here, the quality modified region71is formed at a position where the distance between the front face3of the substrate4and the end part of the quality modified region71on the front face side is 5 μm to 15 μm. When the quality modified region71is formed at such a position, a laminate part16(constituted by interlayer insulating films17a,17bhere) formed on the front face3of the substrate4is also cut along a line to cut with a high precision together with the substrate4.

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