Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2006-04-26
2008-10-14
Lee, Calvin (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C313S512000
Reexamination Certificate
active
07436064
ABSTRACT:
Disclosed is a method for manufacturing an organic optoelectronic device. The method comprises providing a substrate, disposing a first electrode on the substrate, disposing a metal pad on the substrate, electrically separated from the first electrode, disposing a first material over the first electrode and at least partially over the metal pad, applying a beam, wherein the beam ablates the first material in an ablation window so that the ablation window includes at least a portion of an edge of the metal pad, and disposing a second electrode over the first material and over the ablation window so that the second electrode is in electrical contact with the at least a portion of an edge of the metal pad.
REFERENCES:
patent: 6605826 (2003-08-01), Yamazaki et al.
patent: 7148624 (2006-12-01), Guenther et al.
Lau Wen Han
Millard Ian Stephen
Fish & Richardson P.C.
Lee Calvin
Osram Opto Semiconductors GmbH
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