Laser process for gettering defects in semiconductor devices

Metal treatment – Compositions – Heat treating

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29576B, 148187, 357 91, 427 531, H01L 21265, B23K 2700

Patent

active

044153732

ABSTRACT:
A process for gettering defects in a semiconductor is provided. The process comprises using a laser beam to drive a dopant material into a melted non-active surface of a semiconductor device, followed by heating the semiconductor to drive defects to traps formed by the dopant. The process creates in the bulk of the semiconductor strain fields that not only trap defects, which would otherwise degrade device performance, but also hold the defects during subsequent processing steps.

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