Laser probing for solid-state device

Electricity: measuring and testing – Measuring – testing – or sensing electricity – per se – With rotor

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324158D, 382 8, G01R 3126, G01R 3128, G06R 900

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active

047361590

ABSTRACT:
In laser probing of LSI, PICs' (photo-induced currents) are measured at the power source terminal of the LSI, under scanning of laser beam for a good LSI and a fault LSI, the measured PICs' are then superposingly displayed as red and green images, respectively; then faults of LSI are displayed as red spots in a yellow image made by superposition of green and red images.

REFERENCES:
patent: 4178064 (1979-12-01), Mrdjen
patent: 4479145 (1984-10-01), Azuma et al.
Nasashi Nagase; "Device Analysis System Based on Laser Scanning Techniques"; Microelectron. Reliab., vol. 20, pp. 717-735; 1980.
Tsujiyama et al; "A Highly Reliable Mask Inspection System"; IEEE Transaction on Electron Device; vol. Ed 27, No. 7; Jul. 1980; pp. 1284-1290.
Translation of "Failure Analysis for LSIs Using a Laser Probe", A Device Analysis System Based on Laser Scanning Techniques by Shiragasawa et al.

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