Laser polishing semiconductor wafer

Electric heating – Metal heating – By arc

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Details

156643, B23K 2600

Patent

active

047315164

ABSTRACT:
The rough ground rear surface 13b of a semiconductor wafer 11 is mirror-polished by localized irradiation with a focused laser beam 21. The wafer is moved relative to the beam, and the melt puddle formed by the beam thereafter recrystallizes at its trailing edge 24 to leave a mirror smooth rear surface 13c.

REFERENCES:
patent: 4015100 (1977-03-01), Grannathu
patent: 4243433 (1981-01-01), Gibbons
patent: 4343832 (1982-08-01), Smith
patent: 4390392 (1983-06-01), Robinson
patent: 4663826 (1987-05-01), Baeuerle

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