Laser planarization of nonrefractory metal during integrated cir

Details Laser planarization of nonrefractory metal during integrated cir Laser planarization of nonrefractory metal during integrated cir

1987-09-22

1988-07-19

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437174, 437188, 437194, 437908, 148DIG93, 427 531, 2191216, H01L 21268

Patent

active

047585331

ABSTRACT:
Nonrefractory micrometer-thick deposited metal or metallization, for example, aluminum and aluminum alloy films, on integrated circuits are planarized by momentarily melting them with optical pulses from a laser, such as a xenon chloride excimer laser. The substrate, as well as any intervening dielectric and conducive layers, are preheated to preferably one-half the melting temperature of the metal to be planarized, thereby enhancing reflow of the metal upon melting. This improves planarization and reduces stress in the resolidified metal. Laser planarization offers an attractive technique for fabricating multilayer interconnect structures, particularly where a number of ground or power planes are included. Excellent step coverage and via filling is achieved without damaging lower layers of interconnect.

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patent: 4674176 (1987-06-01), Tuckerman
Hodgson, R. T., et al, IBM Tech. Disc. Bull., vol. 21, No. 10, Mar. 1979, P. 4286.
Tuckerman, D. B., et al. IEEE Electron Service Letters, vol. EDL-7, No. 1, Jan. 1986, pp. 1-4.
Hsu, S. C., et al. Metallurgical Transactions B, vol. 9B, Jun. 1978, pp. 221-229.

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