Laser photochemical synthesis of Si.sub.3 N.sub.4

Details Laser photochemical synthesis of Si.sub.3 N.sub.4 Laser photochemical synthesis of Si.sub.3 N.sub.4

1980-04-07

1981-06-02

Williams, Howard S.

Chemistry: electrical and wave energy

Processes and products

Processes of treating materials by wave energy

B01J 1912

Patent

active

042709970

ABSTRACT:
Disclosed is a method to synthesize Si.sub.3 N.sub.4 from SiX.sub.4 +NX.s3, wherein X is selected from hydrogen and/or fluorine, by laser photochemical reaction (LPR) technique in a controlled atmosphere chamber wherein the reactant gases are maintained at pressures between about 10 and about 200 torr in a molar volume ratio of about 3 of the SiX.sub.4 to about 4 of the NX.sub.3. The LPR method produces the compound Si.sub.3 N.sub.4 at room temperature while employing a pulsed laser or a continuous wave laser.

REFERENCES:
Brekel et al., Journal of Electrochemical Society (Mar. 1972), pp. 372-375.
Gross, Optical Engineering (Nov./Dec. 1974), vol. 13, No. 6, pp. 506-508.

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