Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation
Reexamination Certificate
2011-04-26
2011-04-26
Nhu, David (Department: 2895)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Responsive to electromagnetic radiation
C438S106000, C438S123000, C257SE21134, C257SE21327, C257SE21347, C257SE21498, C257SE21499, C257SE21517
Reexamination Certificate
active
07932119
ABSTRACT:
A method is provided for detecting laser optical paths in integrated circuit (IC) packages. The method provides an IC die encapsulated as a package in a compound of glass spheres and epoxy. Power is supplied to the IC. The IC is scanned with a laser. Typically, a laser wavelength is used that is minimally absorbed by the glass spheres in the epoxy compound of the IC package, and changes in current to the IC are detected. A detected current change is cross-referenced against a scanned IC package surface region. This process identifies an optical pathway underlying the scanned IC package surface region. In some aspects, this process leads to the identification of a glass sphere-collecting package structure underlying the optical pathway. Examples of a glass sphere-collecting structure might include an inner lead wire, lead frame edge, or die edge.
REFERENCES:
patent: 2009/0322343 (2009-12-01), Patterson
patent: 2009/0323287 (2009-12-01), Patterson
patent: 2009/0325322 (2009-12-01), Patterson
Eric Paranal, “Localized Die Metallization Damage Induced During Laser-Marking of a Semiconductor Package”, Proceedings of the 33rd International Symposium for testing and Fai.
Applied Micro Circuits Corporation
Law Office of Gerald Maliszewski
Maliszewski Gerald
Nhu David
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