Laser mask and method of crystallization using the same

Details Laser mask and method of crystallization using the same Laser mask and method of crystallization using the same

2007-10-02

2007-10-02

Rosasco, S. (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

C117S043000

Reexamination Certificate

active

11010670

ABSTRACT:
A laser mask and method of crystallization using the same that can produce a polycrystalline silicon thin film having uniform crystallization characteristics. According to the present invention, a method of crystallization using a laser mask having a reference pattern in a first block and the reverse pattern of the reference pattern in a second block includes providing a substrate having a silicon thin film; positioning the first block of the laser mask over a portion of the silicon film and irradiating a first laser beam through the first block; and moving either the laser mask or the substrate to position the second block of the laser mask over the portion of the silicon film and irradiating a second laser beam through the second block.

REFERENCES:
patent: 6523163 (2003-02-01), Toyama
patent: 2004/0083445 (2004-04-01), Mukai et al.
patent: 2006/0024858 (2006-02-01), Kumomi et al.
patent: 1630027 (2005-06-01), None

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