Laser manufacture

Details Laser manufacture Laser manufacture

1989-01-17

1990-08-14

Sikes, William L.

Coherent light generators

Particular active media

Semiconductor

372 45, 357 16, 357 17, H01S 319

Patent

active

049493523

ABSTRACT:
A ridge waveguide laser structure is manufactured by a method including providing a photoresist stripe (8) on an exposed area of a p cap layer (4) of a multilayer laser wafer; etching channels (9) through the cap layer (4) and a p passive layer (3) using the stripe (8) and an oxide layer window (FIG. 4) as a mask; evaporating a passivating and insulating oxide (11, 11a) over the wafer, there being breaks (C) in the oxide where the stripe (8) is undercut during channel etching; and removing the stripe (8) and the oxide (11a) on it by a lift-off technique.

REFERENCES:
patent: 4121179 (1978-10-01), Chinone et al.
Kaminow et al., "Performance of An Improved InGaAsP Ridge Waveguide Laser at 1.3 .mu.m", Electronics Letters, vol. 17, No. 9, Apr. 30, 1981, pp. 318-320.
Tsukada et al., "Very-Low-Current Operation of Mesa-Stripe-Geometry Double-Heterostructure Injection Laser," Appl. Phys. Lett., vol. 20, No. 9, May 1, 1972, pp. 344-345.
Kaminow et al., "Single-Mode CW Ridge-Waveguide Laser Emitting at 1.55 .mu.m", Conference of Integrated and Guided-Wave Optics Technical Digest, Jan. 23-30, 1980, MDS 1-4.

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