Laser make-link programming of semiconductor devices

Details Laser make-link programming of semiconductor devices Laser make-link programming of semiconductor devices

1984-08-02

1987-05-12

Paschall, M. H.

Electric heating

Metal heating

By arc

219121LE, 219121LF, 219121LJ, 219121LH, 427 531, 148 15, 29576B, 29591, B23K 2600, H01L 2146

Patent

active

046652957

ABSTRACT:
A semiconductor device is programmed by a laser beam which causes an electrical short between two conductors on a silicon substrate, as by melting an insulator between the conductors and fusing or shorting the conductors. The conductors may be first and second levels of polycrystalline silicon in a standard double-level poly process, and the insulator is thermal silicon oxide. The laser beam is focused on an area which is shielded from the silicon substrate by the first-level conductor, so heating and disruption of the substrate or underlying circuit structure is minimized.

REFERENCES:
patent: 4240094 (1980-12-01), Mader
patent: 4259367 (1981-03-01), Dougherty, Jr.
patent: 4545111 (1985-10-01), Johnson
IBM Disclosure Bulletin, vol. 21, No. 8, 1/1979, "Laser Programmable Variable-Valve Resistor".
IBM Disclosure Bulletin, vol. 21, No. 9, 2/1979, Laser Engineering Capability for Microcircuit".

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