Laser link structure capable of preventing an upper crack...

Details Laser link structure capable of preventing an upper crack... Laser link structure capable of preventing an upper crack...

2005-03-01

2005-03-01

Elms, Richard (Department: 2824)

Active solid-state devices (e.g., transistors, solid-state diode

Gate arrays

With particular signal path connections

C257S050000, C257S211000, C257S529000, C257S530000

Reexamination Certificate

active

06861682

ABSTRACT:
A laser link structure used in semiconductor devices and a fuse box using the laser link structure preferably include a plurality of first conductive line patterns positioned in parallel at predetermined intervals, and a second conductive line pattern broadly formed on the plurality of first conductive line patterns for forming hole regions which link the second conductive line pattern to the plurality of first conductive line patterns. Preferably, at least one hole region is formed on each of the plurality of first conductive line patterns, and via holes are formed in the hole regions.

REFERENCES:
patent: 5940727 (1999-08-01), Bernstein

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