Laser lift-off of sapphire from a nitride flip-chip

Details Laser lift-off of sapphire from a nitride flip-chip Laser lift-off of sapphire from a nitride flip-chip

2004-12-21

2010-11-30

Ghyka, Alexander G (Department: 2812)

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

Assembly of plural semiconductive substrates each possessing...

C438S022000, C438S113000, C257SE21499, C257SE21705

Reexamination Certificate

active

07842547

ABSTRACT:
In a method for fabricating a flip-chip light emitting diode device, epitaxial layers are deposited on a sapphire growth substrate to produce an epitaxial wafer. A plurality of light emitting diode devices are fabricated on the epitaxial wafer. The epitaxial wafer is diced to generate a device die. The device die is flip chip bonded to a mount. The flip chip bonding includes securing the device die to the mount by bonding at least one electrode of the device die to at least one bonding pad of the mount. Subsequent to the flip chip bonding, the growth substrate of the device die is removed via the application of laser light.

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