Laser irradiation method, method for manufacturing a...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device

Reexamination Certificate

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Details

C257S257000, C257S290000, C438S016000

Reexamination Certificate

active

10911476

ABSTRACT:
The present invention discloses the semiconductor device having the substrate that reflects the laser beam on a surface; that absorbs the laser beam therein; or that partially reflects the laser beam on the surface and partially absorbs the laser beam in the laser annealing. Moreover, the substrate has a poly-crystalline semiconductor film having a large grain size. The present invention suppresses the effect due to the reflected light from a rear surface of the substrate and therefore the uniform laser annealing can be performed.

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