Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Reexamination Certificate
2007-11-13
2007-11-13
Lee, Hsien-Ming (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
C257S257000, C257S290000, C438S016000
Reexamination Certificate
active
10911476
ABSTRACT:
The present invention discloses the semiconductor device having the substrate that reflects the laser beam on a surface; that absorbs the laser beam therein; or that partially reflects the laser beam on the surface and partially absorbs the laser beam in the laser annealing. Moreover, the substrate has a poly-crystalline semiconductor film having a large grain size. The present invention suppresses the effect due to the reflected light from a rear surface of the substrate and therefore the uniform laser annealing can be performed.
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Costellia Jeffrey
Lee Hsien-Ming
Nixon & Peabody LLP
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