Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth with a subsequent step of heat treating...
Reexamination Certificate
2007-11-27
2007-11-27
Kunemund, Robert (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth with a subsequent step of heat treating...
C117S004000, C117S007000, C117S010000, C117S904000, C117S930000, C438S149000, C438S151000, C438S166000, C438S308000
Reexamination Certificate
active
10962468
ABSTRACT:
When a laser beam is radiated on a semiconductor film under appropriate conditions, the semiconductor film can be crystallized into single crystal-like grains connected in a scanning direction of the laser beam (laser annealing). The most efficient laser annealing condition is studied. When a length of one side of a rectangular substrate on which a semiconductor film is formed is b, a scanning speed is V, and acceleration necessary to attain the scanning speed V of the laser beam relative to the substrate is g, and when V=(gb/5.477)1/2is satisfied, a time necessary for the laser annealing is made shortest. The acceleration g is made constant, however, when it is a function of time, a time-averaged value thereof can be used in place of the constant.
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Tanaka Koichiro
Yamazaki Shunpei
Costellia Jeffrey L.
Kunemund Robert
Nixon & Peabody LLP
Semiconductor Energy Laboratory Co,. Ltd.
Song Matthew J.
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