Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Non-single crystal – or recrystallized – material with...
Reexamination Certificate
2007-01-16
2007-01-16
Smith, Zandra V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Non-single crystal, or recrystallized, material with...
C257S066000, C257S070000, C257S072000
Reexamination Certificate
active
10754157
ABSTRACT:
A crystalline film includes a first crystalline region having a first film thickness and a first crystalline grain structure; and a second crystalline region having a second film thickness and a second crystalline grain structure. The first film thickness is greater than the second film thickness and the first and second film thicknesses are selected to provide a crystalline region having the degree and orientation of crystallization that is desired for a device component.
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Voutsas, A. T., “Assessment of the Performance of Laser-Based Lateral-Crystall
Duong Khanh
Smith Zandra V.
The Trustees of Columbia University in the City of New York
Wilmer Cutler Pickering Hale and Dorr LLP
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